APTGL90DH120T3G APTGL90DH120T3G C rev 1 october, 2012 www.microsemi.com 1-6 application ? welding converters ? switched mode power supplies ? uninterruptible power supplies features ? trench + field stop igbt 4 technology - low voltage drop - low leakage current - low switching losses - soft recovery parallel diodes - low diode vf - low leakage current - rbsoa and scsoa rated - symmetrical design ? kelvin emitter for easy drive ? very low stray inductance ? high level of integration ? internal thermistor for temperature monitoring benefits ? outstanding performance at high frequency operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? easy paralleling due to positive tc of vcesat ? each leg can be easily paralleled to achieve a phase leg of twice the current capability ? rohs compliant absolute maximum ratings these devices are sensitiv e to electrostatic discharge. proper handling procedures should be followe d. see application note apt0502 on www.microsemi.com 23 r1 32 30 cr3 cr1 q4 cr2 cr4 31 29 19 7 22 3 4 18 8 q1 15 16 13 14 1615 18 20 23 22 13 11 12 14 87 2930 28 27 26 3 32 31 10 19 2 25 4 all multiple inputs and outputs must be shorted together example: 13/14 ; 29/30 ; 22/23 symbol parameter max ratings unit v ces collector - emitter breakdown voltage 1200 v t c = 25c 110 i c continuous collector current t c = 80c 90 i cm pulsed collector current t c = 25c 150 a v ge gate C emitter voltage 20 v p d maximum power dissipation t c = 25c 385 w rbsoa reverse bias safe operating area t j = 150c 150a @ 1150v v ces = 1200v i c = 90a @ tc = 80c asymmetrical - bridge trench + field stop igbt4 p ower module downloaded from: http:///
APTGL90DH120T3G APTGL90DH120T3G C rev 1 october, 2012 www.microsemi.com 2-6 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 1200v 250 a t j = 25c 1.8 2.2 v ce(sat) collector emitter saturation voltage v ge = 15v i c = 75a t j = 150c 2.2 v v ge(th) gate threshold voltage v ge = v ce , i c = 3ma 5.0 5.8 6.5 v i ges gate C emitter leakage current v ge = 20v, v ce = 0v 600 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 4.4 c oes output capacitance 0.29 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 0.24 nf q g gate charge v ge = 15v ; v ce =600v i c =75a 0.57 c t d(on) turn-on delay time 130 t r rise time 20 t d(off) turn-off delay time 300 t f fall time inductive switching (25c) v ge = 15v v bus = 600v i c = 75a r g = 2.2 ? 45 ns t d(on) turn-on delay time 150 t r rise time 35 t d(off) turn-off delay time 350 t f fall time inductive switching (150c) v ge = 15v v bus = 600v i c = 75a r g = 2.2 ? 80 ns t j = 25c 3.4 e on turn-on switching energy t j = 150c 8.5 mj t j = 25c 4.2 e off turn-off switching energy v ge = 15v v bus = 600v i c = 75a r g = 2.2 ? t j = 150c 7.2 mj i sc short circuit data v ge 15v ; v bus = 900v t p 10s ; t j = 150c 300 a reverse diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1200 v i rm maximum reverse leakage current v r =1200v t j = 25c 250 a i f dc forward current tc = 80c 90 a t j = 25c 1.7 2.2 v f diode forward voltage i f = 75a v ge = 0v t j = 150c 1.65 v t j = 25c 155 t rr reverse recovery time t j = 150c 300 ns t j = 25c 7.3 q rr reverse recovery charge t j = 150c 15.2 c t j = 25c 2.6 e r reverse recovery energy i f = 75a v r = 600v di/dt =1900a/s t j = 150c 5.5 mj downloaded from: http:///
APTGL90DH120T3G APTGL90DH120T3G C rev 1 october, 2012 www.microsemi.com 3-6 thermal and package characteristics symbol characteristic min typ max unit igbt 0.39 r thjc junction to case thermal resistance diode 0.62 c/w v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 175 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 2 3 n.m wt package weight 110 g temperature sensor ntc (see application note apt0406 on www.microsemi.com for more information). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? ? r 25 /r 25 5 % b 25/85 t 25 = 298.15 k 3952 k ? b/b t c =100c 4 % ?? ? ?? ? ? ?? ? ? ?? ? ? ? t t b r r t 1 1 exp 25 85/25 25 sp3 package outline (dimensions in mm) see application note 1901 - mounting instructions for sp3 power modules on www.microsemi.com t: thermistor temperature r t : thermistor value at t downloaded from: http:///
APTGL90DH120T3G APTGL90DH120T3G C rev 1 october, 2012 www.microsemi.com 4-6 typical performance curve output characteristics (v ge =15v) t j =25c t j =150c 0 25 50 75 100 125 150 01234 v ce (v) i c (a) output characteristics v ge =15v v ge =19v v ge =9v 0 25 50 75 100 125 150 01234 v ce (v) i c (a) t j = 150c transfert characteristics t j =25c t j =150c 0 25 50 75 100 125 150 5 6 7 8 9 10 11 12 13 v ge (v) i c (a) energy losses vs collector current eon eon eoff er 0 5 10 15 20 25 30 0 25 50 75 100 125 150 i c (a) e (mj) v ce = 600v v ge = 15v r g = 2.2 ? t j = 150c eon eoff er 0 4 8 12 16 20 0 5 10 15 20 25 gate resistance (ohms) e (mj) v ce = 600v v ge =15v i c = 75a t j = 150c switching energy losses vs gate resistance reverse bias safe operating area 0 40 80 120 160 0 300 600 900 1200 1500 v ce (v) i c (a) v ge =15v t j =150c r g =2.2 ? maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) igbt downloaded from: http:///
APTGL90DH120T3G APTGL90DH120T3G C rev 1 october, 2012 www.microsemi.com 5-6 hard switching zcs zvs 0 20 40 60 80 100 20 40 60 80 100 120 i c (a) fmax, operating frequency (khz) v ce =600v d=50% r g =2.2 ? t j =150c tc=75c operating frequency vs collector current forward characteristic of diode t j =25c t j =150c 0 25 50 75 100 125 150 00 . 511 . 522 . 5 v f , anode to cathode voltage (v) i f , forward current (a) maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w) diode downloaded from: http:///
APTGL90DH120T3G APTGL90DH120T3G C rev 1 october, 2012 www.microsemi.com 6-6 disclaimer the information contained in the document (unless it is publicly available on the web without access restrictions) is proprietary and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the term s of such agreement will also apply. this document and the information contained herein may not be modified, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication , inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in writing signed by an officer of microsemi. microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with li fe- support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or customer s final application. user or customer shall not rely on any data and performance specifications or parameters provided by microsemi. it is the customers and users responsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. microsemi specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp life support application seller's products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the seller's product could create a situation where personal injury, death or property damage or loss may occur (collectively "life support applications"). buyer agrees not to use products in any life support applications and to the extent it does it shall conduct extensive testing of the product in such applications and further agrees to indemnify and hold seller, and its officers, employees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, dam ages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damag e or otherwise associated with the use of the goods in life support applications, even if such claim includes allegations that seller was negligent regarding the design or manufacture of the goods. buyer must notify seller in writing before using sellers products in life support applications. seller will study with buyer alternative solutions to meet buyer application specification based on sellers sales conditions applicable for the new proposed specific part. downloaded from: http:///
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